Carrier dynamics and erbium sensitization in silicon-rich nitride nanocrystals

Ultrafast two-color pump-probe measurements, time-resolved photoluminescence TRPL , and photoluminescence excitation measurements were performed on Si-rich nitride SRN and Er doped SRN Er:SRN nanocrystals samples. Transient absorption data were compared with picosecond TRPL and excited state absorption cross ESA sections were measured at different wavelengths. Our data show that in Er:SRN, which is approximately 10−19 cm2 at 1.54 m, does not scale with the 2 behavior predicted by simple free carrier absorption models. Finally, our data demonstrate that in Er:SRN efficient energy transfer to Er ions occurs on the nanosecond time scale with reduced ESA compared to Er-doped oxide-based systems. © 2008 American Institute of Physics. DOI: 10.1063/1.2978069